2 1 3 20 3 . 8 0 . 2 ? 9 . 1 0 . 2 ? 8 . 1 0 . 1 w i nd o w ? 5 . 9 0 . 1 5 . 08 0 . 2 se n s i t i v e sur fac e ? 0 . 4 5 l e ad SMP550G-FL prelim. 1 /98 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. mechanical d a t a dimensions in mm. p .i.n. ph o t odiode description the SMP550G-FL is a silicon p.i.n. photodiode incorporated in a hermetic metal can package. the electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". the can structure incorporates an photoptic response optical filter with peak transmission at 510nm. the cathode of the photodiode is electrically isolated from the package, which has a separate earth pin. the larger photodiode active area provides greater sensitivity than the smp400 range of devices, with a corresponding reduction in speed. the photodiode structure has been optimised for high sensitivity, light measurement applications. the metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. t o-39 p a c k age operating temperature range storage temperature range t emperature coefficient of responsi v ely t emperature coefficient of da r k current r e v erse breakd o wn v oltage -40c to +70c -45c to +80c 0.35% per c x2 per 8c r ise 60v absolute maximum r a tings (t case = 25c unles s otherwise stated) fe a tures ? eye response detection ? ph o t odiode isol a ted f r om p a ck a ge ? excellent linearity ? l o w noise ? wide spectral response ? l o w leak a ge current ? l o w ca p a ci t ance ? bg18 integral optical fi l ter ? t o39 hermetic me t al can p a ck a ge ? emi screening mesh a v ailable pin 1 C anode pin 2 C cathode pin 3 C case
SMP550G-FL prelim. 1/98 semelab plc . telephone (01455) 556565. telex: 341927. fax (01455) 552612. characteristic t est conditions. min. t yp. max . units responsi v ely acti v e area da r k current breakd o wn v oltage capacitance rise time nep l at 900nm e = 0 da r k 1v r e verse e = 0 da r k 10v r e verse e = 0 da r k 10a re verse e = 0 da r k 0v r e verse e = 0 da r k 20v r e verse 30v r e verse 5 0 w 900nm 0.45 0.55 5.19 2 4 16 22 60 80 55 10 9 19x10 -14 0.45 a/w mm 2 na v pf ns w / ? hz char a cteristic s (t amb =25c unles s otherwise stated) directional characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 10 20 30 40 50 60 70 80 90 angle f ro m sensor to illu m ination directional characteristics 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 normalised incident power 10 20 30 40 50 60 70 80 angle from sensor to illumination spectral response 0 20 40 60 80 100 0 200 400 600 800 1000 1200 w avelength (n m ) relative responsivity (%) normalised incident power
|
